ILD1/ 2/ 5 / ilq1/ 2/ 5 document number 83646 rev. 1.4, 05-nov-04 vishay semiconductors www.vishay.com 1 i179012 1 2 3 4 8 7 6 5 e c c e a c c a a c c a a c c a e c c e e c c e 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 dual channel quad channel pb p b -free e3 optocoupler, phototransistor output (dual, quad channel) features ? current transfer ratio at i f = 10 ma isolation test voltage, 5300 v rms lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 fimko description the ILD1/ 2/ 5/ ilq1/ 2/ 5 are optically coupled iso- lated pairs employing gaas infrared leds and silicon npn phototransistor. signal information, including a dc level, can be transmitted by the drive while main- taining a high degree of electrical isolation between input and output. the ILD1/ 2/ 5/ ilq1/ 2/ 5 are espe- cially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. also these couplers can be used to replace relays and transformers in many digital interface applications such as ctr modulation. the ILD1/ 2/ 5 has two isolated channels in a single dip package and the ilq1/ 2/ 5 has four isolated channels per package. order information for additional information on the available options refer to option information. part remarks ILD1 ctr > 20 %, dip-8 ilq1 ctr > 20 %, dip-16 ild2 ctr > 100 %, dip-8 ilq2 ctr > 100 %, dip-16 ild5 ctr > 50 %, dip-8 ilq5 ctr > 50 %, dip-16 ILD1-x007 ctr > 20 %, smd-8 (option 7) ILD1-x009 ctr > 20 %, smd-8 (option 9) ild2-x006 ctr > 100 %, dip-8 400 mil (option 6) ild2-x007 ctr > 100 %, smd-8 (option 7) ild2-x009 ctr > 100 %, smd-8 (option 9) ild5-x009 ctr > 50 %, smd-8 (option 9) ilq1-x009 ctr > 20 %, smd-16 (option 9) ilq2-x009 ctr > 100 %, smd-16 (option 9)
www.vishay.com 2 document number 83646 rev. 1.4, 05-nov-04 ILD1/ 2/ 5 / ilq1/ 2/ 5 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v forward current i f 60 ma surge current i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c parameter test condition part symbol value unit collector-emitter reverse voltage ILD1 v cer 50 v ilq1 v cer 50 v ild2 v cer 70 v ilq2 v cer 70 v ild5 v cer 70 v ilq5 v cer 70 v collector current i c 50 ma t < 1.0 ms i c 400 ma power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to standard climate 25 c/ 50 % rh, din 50014) v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? package power dissipation p tot 250 mw derate linearly from 25 c 3.3 mw/c storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c junction temperature t j 100 c soldering temperature 2.0 mm from case bottom t sld 260 c
ILD1/ 2/ 5 / ilq1/ 2/ 5 document number 83646 rev. 1.4, 05-nov-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical va lues are characteristics of t he device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio parameter test condition symbol min typ. max unit forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance, junction to lead t thjl 750 k/w parameter test condition symbol min typ. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 6.8 pf collector-emitter leakage current v vce = 10 v i ceo 5.0 50 na saturation voltage, collector- emitter i ce = 1.0 ma, i b = 20 av cesat 0.25 0.4 v dc forward current gain v ce = 10 v, i b = 20 a hfe 200 650 1800 dc forward current gain saturated v ce = 0.4 v, i b = 20 ahfe sat 120 400 600 thermal resistance, junction to lead r thjl 500 k/w parameter test condition symbol min typ. max unit capacitance (input-output) v io = 0 v, f = 1.0 mhz c io 0.8 pf parameter test condition part symbol min typ. max unit current transfer ratio (collector-emitter saturated) i f = 10 ma, v ce = 0.4 v ILD1 ilq1 ctr cesat 75 % ild2 ilq2 ctr cesat 170 % ild5 ilq5 ctr cesat 100 % current transfer ratio (collector-emitter) i f = 10 ma, v ce = 10 v ILD1 ilq1 ctr ce 20 80 300 % ild2 ilq2 ctr ce 100 200 500 % ild5 ilq5 ctr ce 50 130 400 %
www.vishay.com 4 document number 83646 rev. 1.4, 05-nov-04 ILD1/ 2/ 5 / ilq1/ 2/ 5 vishay semiconductors typical switching times non-saturated s witching timing saturated switching timing common mode transient immunity parameter current delay rise time storage fall time propagation h-l propagation l-h test condition v ce = 5.0 v, r l = 75 ? , 50 % of v pp symbol i f t d t r t s t f t phl t plh unit ma s s s s s s ILD1 ilq1 20 0.8 1.9 0.2 1.4 0.7 1.4 ild2 ilq2 5.0 1.7 2.6 0.4 2.2 1.2 2.3 ild5 ilq5 10 1.7 2.6 0.4 2.2 1.1 2.5 parameter current delay rise time storage fall time propagation h-l propagation l-h test condition v ce = 0.4 v, r l = 1.0 k ? , v cc = 5.0 v, v th = 1.5 v symbol i f t d t r t s t f t phl t plh unit ma s s s s s s ILD1 ilq1 20 0.8 1.2 7.4 7.6 1.6 8.6 ild2 ilq2 5.0 1.0 2.0 5.4 13.5 5.4 7.4 ild5 ilq5 10 1.7 7.0 4.6 20 2.6 7.2 parameter test condition symbol min typ. max unit common mode rejection, output high v cm = 50 v p-p , r l = 1.0 k ? , i f = 0 ma cm h 5000 v/ s common mode rejection, output low v cm = 50 v p-p , r l = 1.0 k ? , i f = 10 ma cm l 5000 v/ s common mode coupling capacitance c cm 0.01 pf
ILD1/ 2/ 5 / ilq1/ 2/ 5 document number 83646 rev. 1.4, 05-nov-04 vishay semiconductors www.vishay.com 5 typical characteristics (tamb = 25 c unless otherwise specified) figure 1. non-saturated switching schematic figure 2. non-saturated switching timing figure 3. saturated switching schematic iILD1_01 v o v cc =5 v r l =75 ? f=10 khz, df=50% i f =10 ma iILD1_02 t d t r 50% phl t plh t s t f t i f v o iILD1_03 v o v cc =5 v r l f=10 khz, df=50% i f =10 ma fi 4.sttdsititimi fi 5.mlizdsttddsttdctr.led ct fi 6.mlizdsttddsttdctr.led ct iILD1_04 i f t r =1.5 v v o t d t s t f t phl t plh v th iILD1_05 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55c t a =100c t a = 25c iILD1_06 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma ctrnf - normalized ctr factor normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v
www.vishay.com 6 document number 83646 rev. 1.4, 05-nov-04 ILD1/ 2/ 5 / ilq1/ 2/ 5 vishay semiconductors figure 7. normalized non-saturated and saturated ctr vs. led current figure 8. normalized non-saturated and saturated ctr vs. led current figure 9. normalized non-saturated and saturated ctr vs. led current iILD1_07 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma ctrnf - normalized ctr factor normalized to: v ce =10v,i f = 10 ma, t a = 25c t a = 50c ctrce(sat) v ce = 0.4 v iILD1_08 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr(sat) nctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v t a = 70c ctr - normalized ctr factor iILD1_09 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10 v,i f = 10 ma, t a = 25c ctrce(sat) v ce = 0.4 v t a = 85c figure 10. collector-emitter cu rrent vs. temperature and led current figure 11. collector-emitter leakage current vs.temp. figure 12. propagation delay vs. collector load resistor iILD1_10 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma i ce - collector current - ma 25c 40 iILD1_11 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 t a - ambient temperature - c i ceo - collector-emitter - na vce=10v typical iILD1_12 r l - collector load resistor - k ? 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl t plh - propagation low-high s t phl - propagation high-low s ta = 25c, if = 10 ma vcc=5v,vth=1.5v
ILD1/ 2/ 5 / ilq1/ 2/ 5 document number 83646 rev. 1.4, 05-nov-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a
www.vishay.com 8 document number 83646 rev. 1.4, 05-nov-04 ILD1/ 2/ 5 / ilq1/ 2/ 5 vishay semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
ILD1/ 2/ 5 / ilq1/ 2/ 5 document number 83646 rev. 1.4, 05-nov-04 vishay semiconductors www.vishay.com 9 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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